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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2975 DESCRIPTION *With TO-66 package *High breakdown voltage *Fast switching speed. APPLICATIONS *For switching regulator applications *General purpose power amplifier PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 400 7 5 40 175 -55~175 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2A; IB=0.3A IC=2A; IB=0.3A VCB=640V ;IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V 10 MIN 400 800 7 2SC2975 TYP. MAX UNIT V V V 1.0 1.5 30 10 35 V V A A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2975 Fig.2 Outline dimensions 3 |
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